Method And Device For Localizing Charge Traps In A Crystal Lattice

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention discloses a method and device for accurately identifying the location of charge traps within a crystal lattice. By using a specialized local probe with specific lattice defects, the device measures changes in photoluminescence spectra (due to electric field effects known as Stark shifts) to detect and map where charge traps are present in the crystal. The process involves scanning, data integration, statistical modeling, and spectral comparison to pinpoint the positions of these charge traps.

Use CasesContent extracted from patent full text and abstract with AI.

• Quality control and defect analysis in semiconductor crystal manufacturing
• Development of high-performance electronic and optoelectronic devices
• Basic research in solid-state physics, material science, and quantum technologies
• Diagnostics for failure analysis in microelectronic circuits
• Enhancing crystal growth processes by identifying and mitigating charge trap formation

BenefitsContent extracted from patent full text and abstract with AI.

• Enables highly precise localization of charge traps at the nanoscale
• Improves the ability to identify defects that impact device performance and reliability
• Facilitates better material selection and fabrication methods for advanced electronics
• Supports innovation in quantum computing and sensing by allowing detailed crystal defect mapping
• Automates defect identification through advanced measurement and simulation methods

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

A method is presented for locating charge traps in a crystal lattice. The method includes: arranging a local probe having an inversion-symmetric lattice defect, wherein energy levels of the lattice defect are non-linearly Stark-shiftable by means of charge traps in the crystal lattice; determining Stark-shifted photoluminescence emission spectra, wherein each of the photoluminescence emission spectra is determined in a respective scanning operation by means of photoluminescence excitation in the crystal lattice; determining an integrated spectrum by integrating the photoluminescence emission spectra; determining jump probabilities from consecutive ones of the photoluminescence emission spectra and determining a charge trap configuration from the jump probabilities; determining simulated spectra by means of Monte Carlo simulation based on the determined charge trap configuration and a resulting Stark shift; and determining an optimal spatial arrangement of the charge traps neighboring the local probe by comparing the integrated spectrum with the simulated spectra.